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SIR516DP-T1-RE3
SIR516DP-T1-RE3
MOSFETs SIR516DP-T1-RE3
Vishay
SIR516DP-T1-RE3
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
ECCN (US)EAR99
PackagingTape and Reel
AutomotiveNo
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Quad Drain Triple Source
Product CategoryPower MOSFET
Process TechnologyTrenchFET Gen V
Typical Fall Time (ns)6|7
Typical Rise Time (ns)6|7
Number of Elements per Chip1
Maximum Power Dissipation (mW)5000
Typical Gate Charge @ 10V (nC)23.6
Typical Gate Charge @ Vgs (nC)23.6@10V|17.7@7.5V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)18|23
Maximum Drain Source Voltage (V)100
Typical Turn-Off Delay Time (ns)27|22
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)16.8
Typical Input Capacitance @ Vds (pF)1920@50V
Maximum Drain Source Resistance (mOhm)8@10V
Description
Trans MOSFET N-CH 100V 16.8A T/R
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