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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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SIR582DP-T1-RE3
SIR582DP-T1-RE3
MOSFETs SIR582DP-T1-RE3
Vishay
SIR582DP-T1-RE3
--
Diodes, Transistors and Thyristors
MOSFETs
SIR582DP-T1-RE3.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
ECCN (US)EAR99
PackagingTape and Reel
AutomotiveNo
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Quad Drain Triple Source
Product CategoryPower MOSFET
Process TechnologyTrenchFET Gen V
Typical Fall Time (ns)12
Typical Rise Time (ns)10|18
Number of Elements per Chip1
Maximum Power Dissipation (mW)5600
Typical Gate Charge @ 10V (nC)44.5
Typical Gate Charge @ Vgs (nC)44.5@10V|33.5@7.5V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)18|21
Maximum Drain Source Voltage (V)80
Typical Turn-Off Delay Time (ns)28|25
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)28.9
Operating Junction Temperature (°C)-55 to 150
Typical Input Capacitance @ Vds (pF)3360@40V
Maximum Drain Source Resistance (mOhm)3.4@10V
Description
Trans MOSFET N-CH 80V 28.9A T/R
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