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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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SIR846ADP-T1-GE3
SIR846ADP-T1-GE3
MOSFETs SIR846ADP-T1-GE3
Vishay
SIR846ADP-T1-GE3
--
Diodes, Transistors and Thyristors
MOSFETs
SIR846ADP-T1-GE3.pdf
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count8
AutomotiveNo
PCB changed8
Part StatusNRND
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Quad Drain Triple Source
Package Width5.89
Package Height1.07(Max)
Package Length4.9
Product CategoryPower MOSFET
Supplier PackagePowerPAK SO EP
Process TechnologyTrenchFET
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)9|10
Typical Rise Time (ns)10
Number of Elements per Chip1
Maximum Power Dissipation (mW)5400
Typical Gate Charge @ 10V (nC)44
Typical Gate Charge @ Vgs (nC)44@10V|33@7.5V|26.7@4.5V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)11|14
Maximum Drain Source Voltage (V)100
Typical Turn-Off Delay Time (ns)28|25
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)60
Typical Input Capacitance @ Vds (pF)2350@50V
Maximum Drain Source Resistance (mOhm)7.8@10V
Description
Trans MOSFET N-CH 100V 60A 8-Pin PowerPAK SO EP T/R
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