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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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SIRA26DP-T1-RE3
SIRA26DP-T1-RE3
MOSFETs SIRA26DP-T1-RE3
Vishay
SIRA26DP-T1-RE3
--
Diodes, Transistors and Thyristors
MOSFETs
SIRA26DP-T1-RE3.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count8
AutomotiveNo
PCB changed8
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Quad Drain Triple Source
Package Width5.89
Package Height1.07(Max)
Package Length4.9
Product CategoryPower MOSFET
Supplier PackagePowerPAK SO EP
Typical Fall Time (ns)8|13
Typical Rise Time (ns)23|48
Number of Elements per Chip1
Maximum Power Dissipation (mW)3900
Typical Gate Charge @ 10V (nC)29
Typical Gate Charge @ Vgs (nC)29@10V|13.2@4.5V
Maximum Gate Source Voltage (V)16
Typical Turn-On Delay Time (ns)9|17
Maximum Drain Source Voltage (V)25
Typical Turn-Off Delay Time (ns)13|16
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)60
Typical Input Capacitance @ Vds (pF)2247@10V
Maximum Drain Source Resistance (mOhm)2.65@10V
Description
Trans MOSFET N-CH 25V 60A 8-Pin PowerPAK SO EP T/R
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