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MOSFETs SIS590DN-T1-GE3
Vishay
SIS590DN-T1-GE3
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Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| HTS | 8541.29.00.95 |
| PPAP | No |
| EU RoHS | Compliant |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 8 |
| Automotive | No |
| PCB changed | 8 |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | N|P |
| Configuration | Dual Dual Drain |
| Package Width | 3.05 |
| Package Height | 1.07(Max) |
| Package Length | 3.05 |
| Product Category | Power MOSFET |
| Supplier Package | PowerPAK 1212 EP |
| Process Technology | TrenchFET |
| Typical Fall Time (ns) | 12@N Channel|11@P Channel |
| Typical Rise Time (ns) | 45@N Channel|50@P Channel |
| Number of Elements per Chip | 2 |
| Maximum Power Dissipation (mW) | 2500@N Channel|2600@P Channel |
| Typical Gate Charge @ 10V (nC) | 4.5@N Channel|11.2@P Channel |
| Typical Gate Charge @ Vgs (nC) | 5.7@4.5V@P Channel|4.5@10V|2.3@4.5V@N Channel|11.2@10V |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Turn-On Delay Time (ns) | 12@N Channel|15@P Channel |
| Maximum Drain Source Voltage (V) | 100 |
| Typical Turn-Off Delay Time (ns) | 22@N Channel|30@P Channel |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 2.7@N Channel|2.3@P Channel |
| Typical Input Capacitance @ Vds (pF) | 265@50V@N Channel|325@50V@P Channel |
| Maximum Drain Source Resistance (mOhm) | 167@10V@N Channel|251@10V@P Channel |
| Description |
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