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MOSFETs SIS612EDNT-T1-GE3
Vishay
SIS612EDNT-T1-GE3
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Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| PPAP | No |
| EU RoHS | Compliant |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Pin Count | 8 |
| Automotive | No |
| PCB changed | 8 |
| Part Status | Obsolete |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single Quad Drain Triple Source |
| Package Width | 3.05 |
| Package Height | 0.75(Max) |
| Package Length | 3.05 |
| Product Category | Power MOSFET |
| Supplier Package | PowerPAK 1212 EP |
| Maximum IDSS (uA) | 1 |
| Process Technology | TrenchFET |
| Typical Fall Time (ns) | 12 |
| Typical Rise Time (ns) | 65 |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 3700 |
| Typical Gate Charge @ 10V (nC) | 46 |
| Typical Gate Charge @ Vgs (nC) | 46@10V|22.5@4.5V |
| Maximum Gate Source Voltage (V) | ±12 |
| Typical Turn-On Delay Time (ns) | 16 |
| Maximum Drain Source Voltage (V) | 20 |
| Typical Turn-Off Delay Time (ns) | 40 |
| Maximum Gate Threshold Voltage (V) | 1.2 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 50 |
| Typical Input Capacitance @ Vds (pF) | 2060@10V |
| Maximum Drain Source Resistance (mOhm) | 3.9@4.5V |
| Maximum Gate Source Leakage Current (nA) | 10000 |
| Description |
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