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MOSFETs SIS890ADN-T1-GE3
Vishay
SIS890ADN-T1-GE3
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Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| PPAP | No |
| EU RoHS | Compliant |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Automotive | No |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single Quad Drain Triple Source |
| Product Category | Power MOSFET |
| Typical Fall Time (ns) | 4|5 |
| Typical Rise Time (ns) | 6|8 |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 3600 |
| Typical Gate Charge @ Vgs (nC) | 19.2@10V|8.8@4.5V |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Turn-On Delay Time (ns) | 9|14 |
| Maximum Drain Source Voltage (V) | 100 |
| Typical Turn-Off Delay Time (ns) | 15|19 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 7.6 |
| Typical Input Capacitance @ Vds (pF) | 1330@50V |
| Maximum Drain Source Resistance (MOhm) | 25.5@10V |
| Description |
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