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SIS990DN-T1-GE3
SIS990DN-T1-GE3
MOSFETs SIS990DN-T1-GE3
Vishay
SIS990DN-T1-GE3
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count8
AutomotiveNo
Lead ShapeNo Lead
PCB changed8
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationDual Dual Drain
Package Width3.05
Package Height1.07(Max)
Package Length3.05
Product CategoryPower MOSFET
Supplier PackagePowerPAK EP
Maximum IDSS (uA)1
Process TechnologyTrenchFET
Standard Package NamePowerPAK
Typical Fall Time (ns)6
Typical Rise Time (ns)8
Number of Elements per Chip2
Maximum Power Dissipation (mW)2800
Typical Gate Charge @ 10V (nC)5.2
Typical Gate Charge @ Vgs (nC)5.2@10V|4@7.5V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)8
Maximum Drain Source Voltage (V)100
Typical Turn-Off Delay Time (ns)8
Maximum Gate Threshold Voltage (V)4
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)4.1
Typical Input Capacitance @ Vds (pF)250@50V
Maximum Drain Source Resistance (MOhm)85@10V
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET N-CH 100V 4.1A 8-Pin PowerPAK EP T/R
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