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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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SISA10BDN-T1-GE3
SISA10BDN-T1-GE3
MOSFETs SISA10BDN-T1-GE3
Vishay
SISA10BDN-T1-GE3
--
Diodes, Transistors and Thyristors
MOSFETs
SISA10BDN-T1-GE3.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count8
AutomotiveNo
PCB changed8
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Quad Drain Triple Source
Package Width3.1
Package Height0.74
Package Length3.1
Product CategoryPower MOSFET
Supplier PackagePowerPAK 1212-PT EP
Process TechnologyTrenchFET Gen IV
Typical Fall Time (ns)15
Typical Rise Time (ns)35
Number of Elements per Chip1
Maximum Power Dissipation (mW)3800
Typical Gate Charge @ 10V (nC)24.1
Typical Gate Charge @ Vgs (nC)11.7@4.5V|24.1@10V
Maximum Gate Source Voltage (V)20
Typical Turn-On Delay Time (ns)17
Maximum Drain Source Voltage (V)30
Typical Turn-Off Delay Time (ns)30
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)26
Operating Junction Temperature (°C)-55 to 150
Typical Input Capacitance @ Vds (pF)1710@15V
Maximum Drain Source Resistance (mOhm)3.6@10V
Description
Trans MOSFET N-CH 30V 26A 8-Pin PowerPAK 1212-PT EP T/R
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