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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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SISF00DN-T1-GE3
SISF00DN-T1-GE3
MOSFETs SISF00DN-T1-GE3
Vishay
SISF00DN-T1-GE3
--
Diodes, Transistors and Thyristors
MOSFETs
SISF00DN-T1-GE3.pdf
Specification
Product AttributeAttribute Value
PPAPNo
ECCN (US)EAR99
PackagingTape and Reel
AutomotiveNo
Channel ModeEnhancement
Channel TypeN
ConfigurationDual Common Drain Dual Source
Product CategoryPower MOSFET
Maximum IDSS (uA)1
Typical Fall Time (ns)10|15
Typical Rise Time (ns)32|60
Number of Elements per Chip2
Maximum Power Dissipation (mW)5200
Typical Gate Charge @ 10V (nC)35
Typical Gate Charge @ Vgs (nC)35@10V|16.1@4.5V
Maximum Gate Source Voltage (V)20|-16
Typical Turn-On Delay Time (ns)21|10
Maximum Drain Source Voltage (V)30
Typical Turn-Off Delay Time (ns)22|25
Maximum Gate Threshold Voltage (V)2.1
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)25.5
Typical Input Capacitance @ Vds (pF)2700@15V
Maximum Drain Source Resistance (mOhm)5@10V
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET N-CH 30V 25.5A T/R
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