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MOSFETs SISH536DN-T1-GE3
Vishay
SISH536DN-T1-GE3
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| PPAP | No |
| EU RoHS | Compliant with Exemption |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Automotive | No |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single Quad Drain Triple Source |
| Product Category | Power MOSFET |
| Maximum IDSS (uA) | 1 |
| Process Technology | TrenchFET |
| Typical Fall Time (ns) | 8 |
| Typical Rise Time (ns) | 9 |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 3570 |
| Typical Gate Charge @ 10V (nC) | 16.6 |
| Typical Gate Charge @ Vgs (nC) | 16.6@10V|7.6@4.5V |
| Maximum Gate Source Voltage (V) | 16 |
| Typical Turn-On Delay Time (ns) | 12 |
| Maximum Drain Source Voltage (V) | 30 |
| Typical Turn-Off Delay Time (ns) | 18 |
| Maximum Gate Threshold Voltage (V) | 2.2 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 24.7 |
| Typical Input Capacitance @ Vds (pF) | 1150@15V |
| Maximum Drain Source Resistance (mOhm) | 3.25@10V |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Description |
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