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SISS32LDN-T1-GE3
SISS32LDN-T1-GE3
MOSFETs SISS32LDN-T1-GE3
Vishay
SISS32LDN-T1-GE3
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
PPAPNo
MountingSurface Mount
ECCN (US)EAR99
Pin Count8
AutomotiveNo
PCB changed8
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Quad Drain Triple Source
Package Width3.3
Package Height0.93(Max)
Package Length3.3
Product CategoryPower MOSFET
Supplier PackagePowerPAK 1212-SWLH EP
Maximum IDSS (uA)1
Typical Fall Time (ns)10|6
Typical Rise Time (ns)61|6
Number of Elements per Chip1
Maximum Power Dissipation (mW)5000
Typical Gate Charge @ 10V (nC)37.5
Typical Gate Charge @ Vgs (nC)37.5@10V|17.7@4.5V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)22|12
Maximum Drain Source Voltage (V)80
Typical Turn-Off Delay Time (ns)28|26
Maximum Gate Threshold Voltage (V)2.5
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)17.4
Typical Input Capacitance @ Vds (pF)2550@40V
Maximum Drain Source Resistance (mOhm)7.2@10V
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET N-CH 80V 17.4A 8-Pin PowerPAK 1212-SWLH EP T/R
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