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SISS40DN-T1-GE3
SISS40DN-T1-GE3
MOSFETs SISS40DN-T1-GE3
Vishay
SISS40DN-T1-GE3
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count8
AutomotiveNo
Lead ShapeNo Lead
PCB changed8
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Quad Drain Triple Source
Package Width3.3
Package Height0.78(Max)
Package Length3.3
Supplier PackagePowerPAK EP
Maximum IDSS (uA)1
Process TechnologyTrenchFET
Standard Package NamePowerPAK
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)5
Typical Rise Time (ns)5
Number of Elements per Chip1
Maximum Power Dissipation (mW)3700
Typical Gate Charge @ 10V (nC)16
Typical Gate Charge @ Vgs (nC)16@10V|12.2@7.5V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)12|14
Maximum Drain Source Voltage (V)100
Typical Turn-Off Delay Time (ns)14|19
Maximum Gate Threshold Voltage (V)3.5
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)36.5
Typical Input Capacitance @ Vds (pF)845@50V
Maximum Drain Source Resistance (MOhm)21@10V
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET N-CH 100V 36.5A 8-Pin PowerPAK EP T/R
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