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MOSFETs SISS5710DN-T1-GE3
Vishay
SISS5710DN-T1-GE3
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Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| PPAP | No |
| EU RoHS | Compliant |
| ECCN (US) | EAR99 |
| Automotive | No |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single Quad Drain Triple Source |
| Product Category | Power MOSFET |
| Process Technology | TrenchFET Gen V |
| Typical Fall Time (ns) | 13 |
| Typical Rise Time (ns) | 7|8 |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 4100 |
| Typical Gate Charge @ 10V (nC) | 10 |
| Typical Gate Charge @ Vgs (nC) | 10@10V|7.7@7.5V |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Turn-On Delay Time (ns) | 11|12 |
| Maximum Drain Source Voltage (V) | 150 |
| Typical Turn-Off Delay Time (ns) | 11|12 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 7.2 |
| Operating Junction Temperature (°C) | -55 to 150 |
| Typical Input Capacitance @ Vds (pF) | 770@75V |
| Maximum Drain Source Resistance (mOhm) | 31.5@10V |
| Description |
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