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SISS61DN-T1-GE3
SISS61DN-T1-GE3
MOSFETs SISS61DN-T1-GE3
Vishay
SISS61DN-T1-GE3
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count8
AutomotiveNo
PCB changed8
Part StatusActive
Channel ModeEnhancement
Channel TypeP
ConfigurationSingle Quad Drain Triple Source
Package Width3.3
Package Height0.78(Max)
Package Length3.3
Product CategoryPower MOSFET
Supplier PackagePowerPAK 1212 EP
Typical Fall Time (ns)42
Typical Rise Time (ns)51
Number of Elements per Chip1
Maximum Power Dissipation (mW)5000
Typical Gate Charge @ Vgs (nC)154@8V|86@4.5V
Maximum Gate Source Voltage (V)±8
Typical Turn-On Delay Time (ns)32
Maximum Drain Source Voltage (V)20
Typical Turn-Off Delay Time (ns)106
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)30.9
Typical Input Capacitance @ Vds (pF)8740@10V
Maximum Drain Source Resistance (mOhm)3.5@4.5V
Description
Trans MOSFET P-CH 20V 30.9A 8-Pin PowerPAK 1212 EP T/R
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