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MOSFETs SIZ254DT-T1-GE3
Vishay
SIZ254DT-T1-GE3
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Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| PPAP | No |
| EU RoHS | Compliant |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Pin Count | 8 |
| Automotive | No |
| PCB changed | 8 |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Dual |
| Package Width | 3.3 |
| Package Height | 0.75(Max) |
| Package Length | 3.3 |
| Product Category | Power MOSFET |
| Supplier Package | PowerPAIR EP |
| Maximum IDSS (uA) | 1 |
| Process Technology | TrenchFET |
| Typical Fall Time (ns) | 6|10@Channel 1|5|10@Channel 2 |
| Typical Rise Time (ns) | 6|30@Channel 1|26@Channel 2 |
| Number of Elements per Chip | 2 |
| Maximum Power Dissipation (mW) | 4300 |
| Typical Gate Charge @ 10V (nC) | 13 |
| Typical Gate Charge @ Vgs (nC) | 13@10V|6.1@4.5V |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Turn-On Delay Time (ns) | 12|20@Channel 1|18@Channel 2 |
| Maximum Drain Source Voltage (V) | 70 |
| Typical Turn-Off Delay Time (ns) | 24|22@Channel 1|23|22@Channel 2 |
| Maximum Gate Threshold Voltage (V) | 2.4 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 11.7 |
| Typical Input Capacitance @ Vds (pF) | 795@35V@Channel 1|765@35V@Channel 2 |
| Maximum Drain Source Resistance (mOhm) | 16.1@10V |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Description |
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