HTS | 8541.29.00.95 |
PPAP | No |
EU RoHS | Compliant |
Mounting | Surface Mount |
ECCN (US) | EAR99 |
Packaging | Tape and Reel |
Pin Count | 8 |
Automotive | No |
PCB changed | 8 |
Channel Mode | Enhancement |
Channel Type | N |
Configuration | Dual |
Package Width | 3 |
Package Height | 0.75(Max) |
Package Length | 3 |
Product Category | Power MOSFET |
Supplier Package | PowerPAIR EP |
Maximum IDSS (uA) | 1 |
Process Technology | TrenchFET Gen IV |
Typical Fall Time (ns) | 10|38@Channel 1|8|15@Channel 2 |
Typical Rise Time (ns) | 28|80@Channel 1|8|180@Channel 2 |
Number of Elements per Chip | 2 |
Maximum Power Dissipation (mW) | 3700@Channel 1|4200@Channel 2 |
Typical Gate Charge @ 10V (nC) | 8.1@Channel 1|18.6@Channel 2 |
Typical Gate Charge @ Vgs (nC) | 8.1@10V|3.7@4.5V@Channel 1|18.6@10V|8.4@4.5V@Channel 2 |
Maximum Gate Source Voltage (V) | 20@Channel 1|16@Channel 2 |
Typical Turn-On Delay Time (ns) | 8|15@Channel 1|12|22@Channel 2 |
Maximum Drain Source Voltage (V) | 30 |
Typical Turn-Off Delay Time (ns) | 15|10@Channel 1|22|26@Channel 2 |
Maximum Gate Threshold Voltage (V) | 2.4 |
Maximum Operating Temperature (°C) | 150 |
Minimum Operating Temperature (°C) | -55 |
Maximum Continuous Drain Current (A) | 15.7@Channel 1|25.4@Channel 2 |
Typical Input Capacitance @ Vds (pF) | 580@15V@Channel 1|1290@15V@Channel 2 |
Maximum Drain Source Resistance (mOhm) | 9.4@10V@Channel 1|4.29@10V@Channel 2 |
Maximum Gate Source Leakage Current (nA) | 100 |
Description | |