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SIZ340BDT-T1-GE3
SIZ340BDT-T1-GE3
MOSFETs SIZ340BDT-T1-GE3
Vishay
SIZ340BDT-T1-GE3
--
Diodes, Transistors and Thyristors
MOSFETs
SIZ340BDT-T1-GE3.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
ECCN (US)EAR99
PackagingTape and Reel
AutomotiveNo
Channel ModeEnhancement
Channel TypeN
ConfigurationDual
Product CategoryPower MOSFET
Typical Fall Time (ns)14@Channel 1|13@Channel 2
Typical Rise Time (ns)230@Channel 2|450@Channel 1
Number of Elements per Chip2
Maximum Power Dissipation (mW)3700@Channel 1|4200@Channel 2
Typical Gate Charge @ Vgs (nC)7.3@4.5V@Channel 2|15.7@10V|8.4@10V|4@4.5V@Channel 1
Maximum Gate Source Voltage (V)20|-16
Typical Turn-On Delay Time (ns)15@Channel 1|20@Channel 2
Maximum Drain Source Voltage (V)30
Typical Turn-Off Delay Time (ns)10@Channel 1|20@Channel 2
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)16.9@Channel 1|25.3@Channel 2
Typical Input Capacitance @ Vds (pF)1065@15V@Channel 2|550@15V@Channel 1
Maximum Drain Source Resistance (mOhm)8.56@10V@Channel 1|4.31@10V@Channel 2
Description
Trans MOSFET N-CH 30V 16.9A/25.3A T/R
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