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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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SIZ728DT-T1-GE3
SIZ728DT-T1-GE3
MOSFETs SIZ728DT-T1-GE3
Vishay
SIZ728DT-T1-GE3
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Diodes, Transistors and Thyristors
MOSFETs
SIZ728DT-T1-GE3.pdf
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count6
AutomotiveNo
PCB changed6
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationDual
Package Width6
Package Height0.75(Max)
Package Length3.73
Product CategoryPower MOSFET
Supplier PackagePowerPAIR
Process TechnologyTrenchFET
Typical Fall Time (ns)10@Channel 1|10@Channel 2
Typical Rise Time (ns)15|12@Channel 1|18|12@Channel 2
Number of Elements per Chip2
Maximum Power Dissipation (mW)3900@Channel 1|4600@Channel 2
Typical Gate Charge @ 10V (nC)17@Channel 1|42.5@Channel 2
Typical Gate Charge @ Vgs (nC)17@10V|8.1@4.5V@Channel 1|20.5@4.5V@Channel 2|42.5@10V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)12|7@Channel 1|20|10@Channel 2
Maximum Drain Source Voltage (V)25
Typical Turn-Off Delay Time (ns)15|25@Channel 1|30@Channel 2
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)16@Channel 1|28.8@Channel 2
Typical Input Capacitance @ Vds (pF)890@12.5V@Channel 1|2360@12.5V@Channel 2
Maximum Drain Source Resistance (MOhm)7.7@10V@Channel 1|3.5@10V@Channel 2
Description
Trans MOSFET N-CH 25V 16A/28.8A 6-Pin PowerPAIR T/R
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