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SIZ902DT-T1-GE3
SIZ902DT-T1-GE3
MOSFETs SIZ902DT-T1-GE3
Vishay
SIZ902DT-T1-GE3
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count8
AutomotiveNo
PCB changed8
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationDual
Package Width6
Package Height0.7(Max)
Package Length5
Product CategoryPower MOSFET
Supplier PackagePowerPAIR
Maximum IDSS (uA)1
Process TechnologyTrenchFET
Typical Fall Time (ns)10
Typical Rise Time (ns)12@Channel 1|20@Channel 2
Number of Elements per Chip2
Maximum Power Dissipation (mW)4200@Channel 1|5000@Channel 2
Typical Gate Charge @ 10V (nC)14@Channel 1|43@Channel 2
Typical Gate Charge @ Vgs (nC)14@10V|6.8@4.5V@Channel 1|43@10V|21@4.5V@Channel 2
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)15@Channel 1|23@Channel 2
Maximum Drain Source Voltage (V)30
Typical Turn-Off Delay Time (ns)20@Channel 1|35@Channel 2
Maximum Gate Threshold Voltage (V)2.2
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)14.3@Channel 1|16@Channel 2
Typical Input Capacitance @ Vds (pF)790@15V@Channel 1|2600@15V@Channel 2
Maximum Drain Source Resistance (MOhm)12@10V@Channel 1|6.4@10V@Channel 2
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET N-CH 30V 14.3A/16A 8-Pin PowerPAIR T/R
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