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MOSFETs SIZ926DT-T1-GE3
Vishay
SIZ926DT-T1-GE3
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Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| PPAP | No |
| EU RoHS | Compliant |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 8 |
| Automotive | No |
| PCB changed | 8 |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Dual |
| Package Width | 6 |
| Package Height | 0.7(Max) |
| Package Length | 5 |
| Product Category | Power MOSFET |
| Supplier Package | PowerPAIR EP |
| Process Technology | TrenchFET Gen IV |
| Typical Fall Time (ns) | 8|12 |
| Typical Rise Time (ns) | 20|47@Channel 1|40@Channel 2 |
| Number of Elements per Chip | 2 |
| Maximum Power Dissipation (mW) | 3800@Channel 1|4800@Channel 2 |
| Typical Gate Charge @ 10V (nC) | 12.5@Channel 1|27@Channel 2 |
| Typical Gate Charge @ Vgs (nC) | 27@10V|12.5@4.5V@Channel 2|12.5@10V|5.9@4.5V@Channel 1 |
| Maximum Gate Source Voltage (V) | 16 |
| Typical Turn-On Delay Time (ns) | 8|12@Channel 1|10|16@Channel 2 |
| Maximum Drain Source Voltage (V) | 25 |
| Typical Turn-Off Delay Time (ns) | 12|6@Channel 1|17|13@Channel 2 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 22@Channel 1|37@Channel 2 |
| Operating Junction Temperature (°C) | -55 to 150 |
| Typical Input Capacitance @ Vds (pF) | 925@10V@Channel 1|2150@10V@Channel 2 |
| Maximum Drain Source Resistance (mOhm) | 4.8@10V@Channel 1|2.2@10V@Channel 2 |
| Description |
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