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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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SIZ980BDT-T1-GE3
SIZ980BDT-T1-GE3
MOSFETs SIZ980BDT-T1-GE3
Vishay
SIZ980BDT-T1-GE3
--
Diodes, Transistors and Thyristors
MOSFETs
SIZ980BDT-T1-GE3.pdf
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
Pin Count8
AutomotiveNo
PCB changed8
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationDual
Package Width6
Package Height0.7(Max)
Package Length5
Product CategoryPower MOSFET
Supplier PackagePowerPAIR EP
Typical Fall Time (ns)12@Channel 1|20@Channel 2
Typical Rise Time (ns)100@Channel 1|90@Channel 2
Number of Elements per Chip2
Maximum Power Dissipation (mW)3800@Channel 1|5000@Channel 2
Typical Gate Charge @ Vgs (nC)12@10V|5.7@4.5V@Channel 1|52.2@10V|24.2@4.5V@Channel 2
Maximum Gate Source Voltage (V)20|-16
Typical Turn-On Delay Time (ns)20@Channel 1|35@Channel 2
Maximum Drain Source Voltage (V)30
Typical Turn-Off Delay Time (ns)15@Channel 1|35@Channel 2
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)23.7@Channel 1|54.3@Channel 2
Typical Input Capacitance @ Vds (pF)790@15V@Channel 1|3655@15V@Channel 2
Maximum Drain Source Resistance (MOhm)4.39@10V@Channel 1|1.06@10V@Channel 2
Description
Trans MOSFET N-CH 30V 23.7A/54.3A 8-Pin PowerPAIR EP
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