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MOSFETs SIZ980DT-T1-GE3
Vishay
SIZ980DT-T1-GE3
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| PPAP | No |
| SVHC | Yes |
| EU RoHS | Compliant with Exemption |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 8 |
| Automotive | No |
| Lead Shape | No Lead |
| PCB changed | 8 |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Dual |
| Package Width | 6 |
| Package Height | 0.7(Max) |
| Package Length | 5 |
| Product Category | Power MOSFET |
| Supplier Package | PowerPAIR EP |
| Maximum IDSS (uA) | 1@Channel 1|100@Channel 2 |
| Process Technology | TrenchFET |
| SVHC Exceeds Threshold | Yes |
| Typical Fall Time (ns) | 10 |
| Typical Rise Time (ns) | 25|65@Channel 1|21|75@Channel 2 |
| Number of Elements per Chip | 2 |
| Maximum Gate Resistance (Ohm) | 3@Channel 1|2@Channel 2 |
| Minimum Gate Resistance (Ohm) | 1.5@Channel 1|1@Channel 2 |
| Maximum Power Dissipation (mW) | 3800@Channel 1|5000@Channel 2 |
| Typical Gate Charge @ 10V (nC) | 12@Channel 1|51@Channel 2 |
| Typical Gate Charge @ Vgs (nC) | 5.4@4.5V|12@10V@Channel 1|23@4.5V|51@10V@Channel 2 |
| Maximum Gate Source Voltage (V) | 20 |
| Typical Output Capacitance (pF) | 325@Channel 1|1700@Channel 2 |
| Typical Turn-On Delay Time (ns) | 10|15@Channel 1|15|35@Channel 2 |
| Maximum Drain Source Voltage (V) | 30 |
| Typical Gate Plateau Voltage (V) | 3@Channel 1|2.7@Channel 2 |
| Typical Turn-Off Delay Time (ns) | 10|15@Channel 1|30|32@Channel 2 |
| Maximum Diode Forward Voltage (V) | 1.2@Channel 1|0.87@Channel 2 |
| Typical Diode Forward Voltage (V) | 0.8@Channel 1|0.58@Channel 2 |
| Typical Gate to Drain Charge (nC) | 0.75@Channel 1|2.2@Channel 2 |
| Maximum Gate Threshold Voltage (V) | 2.2 |
| Minimum Gate Threshold Voltage (V) | 1.2@Channel 1|1.1@Channel 2 |
| Typical Gate to Source Charge (nC) | 3@Channel 1|12.2@Channel 2 |
| Typical Reverse Recovery Time (ns) | 30@Channel 1|50@Channel 2 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 20@Channel 1|60@Channel 2 |
| Operating Junction Temperature (°C) | -55 to 150 |
| Typical Input Capacitance @ Vds (pF) | 930@15V@Channel 1|4600@15V@Channel 2 |
| Typical Reverse Recovery Charge (nC) | 11@Channel 1|28@Channel 2 |
| Maximum Drain Source Resistance (mOhm) | 6.7@10V@Channel 1|1.6@10V@Channel 2 |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Maximum Positive Gate Source Voltage (V) | 20 |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 90@Channel 1|130@Channel 2 |
| Maximum Power Dissipation on PCB @ TC=25°C (W) | 3.8@Channel 1|5@Channel 2 |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 115@15V@Channel 2|21@15V@Channel 1 |
| Maximum Continuous Drain Current on PCB @ TC=25°C (A) | 18.8@Channel 1|43@Channel 2 |
| Maximum Junction Ambient Thermal Resistance on PCB (°C/W) | 68@Channel 1|57@Channel 2 |
| Description |
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