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MOSFETs SIZ988DT-T1-GE3
Vishay
SIZ988DT-T1-GE3
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| HTS | 8541.29.00.95 |
| PPAP | No |
| EU RoHS | Compliant with Exemption |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 8 |
| Automotive | No |
| Lead Shape | No Lead |
| PCB changed | 8 |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Dual |
| Package Width | 6 |
| Package Height | 0.7(Max) |
| Package Length | 5 |
| Product Category | Power MOSFET |
| Supplier Package | PowerPAIR EP |
| Maximum IDSS (uA) | 1 |
| Process Technology | TrenchFET |
| Typical Fall Time (ns) | 5|7@Channel 1|10@Channel 2 |
| Typical Rise Time (ns) | 10@Channel 1|10|15@Channel 2 |
| Number of Elements per Chip | 2 |
| Maximum Gate Resistance (Ohm) | 3.2@Channel 1|3.4@Channel 2 |
| Minimum Gate Resistance (Ohm) | 0.4@Channel 1|0.3@Channel 2 |
| Maximum Power Dissipation (mW) | 3800@Channel 1|4800@Channel 2 |
| Typical Gate Charge @ 10V (nC) | 14.3@Channel 1|34@Channel 2 |
| Typical Gate Charge @ Vgs (nC) | 6.9@4.5V|14.3@10V@Channel 1|15.4@4.5V|34@10V@Channel 2 |
| Maximum Gate Source Voltage (V) | 20 |
| Typical Output Capacitance (pF) | 280@Channel 1|730@Channel 2 |
| Typical Turn-On Delay Time (ns) | 10|20@Channel 2|15@Channel 1 |
| Maximum Drain Source Voltage (V) | 30 |
| Typical Gate Plateau Voltage (V) | 2.9@Channel 1|2.2@Channel 2 |
| Typical Turn-Off Delay Time (ns) | 15@Channel 1|25|27@Channel 2 |
| Maximum Diode Forward Voltage (V) | 1.2 |
| Typical Diode Forward Voltage (V) | 0.77@Channel 1|0.8@Channel 2 |
| Typical Gate to Drain Charge (nC) | 1.6@Channel 1|2.6@Channel 2 |
| Maximum Gate Threshold Voltage (V) | 2.4@Channel 1|2.2@Channel 2 |
| Minimum Gate Threshold Voltage (V) | 1.2@Channel 1|1.1@Channel 2 |
| Typical Gate to Source Charge (nC) | 2.8@Channel 1|5.8@Channel 2 |
| Typical Reverse Recovery Time (ns) | 19@Channel 1|31@Channel 2 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 40@Channel 1|60@Channel 2 |
| Operating Junction Temperature (°C) | -55 to 150 |
| Typical Input Capacitance @ Vds (pF) | 1000@15V@Channel 1|2425@15V@Channel 2 |
| Typical Reverse Recovery Charge (nC) | 7@Channel 1|19@Channel 2 |
| Maximum Drain Source Resistance (MOhm) | 7.5@10V@Channel 1|4.1@10V@Channel 2 |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Maximum Positive Gate Source Voltage (V) | 20 |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 70@Channel 1|140@Channel 2 |
| Maximum Power Dissipation on PCB @ TC=25°C (W) | 3.8@Channel 1|4.8@Channel 2 |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 34@15V@Channel 1|65@15V@Channel 2 |
| Maximum Continuous Drain Current on PCB @ TC=25°C (A) | 17.5@Channel 1|27@Channel 2 |
| Maximum Junction Ambient Thermal Resistance on PCB (°C/W) | 68@Channel 1|57@Channel 2 |
| Description |
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