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MOSFETs SIZF906BDT-T1-GE3
Vishay
SIZF906BDT-T1-GE3
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Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| EU RoHS | Compliant |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Dual |
| Product Category | Power MOSFET |
| Maximum IDSS (uA) | 1@Channel 1|1000@Channel 2 |
| Process Technology | TrenchFET |
| Typical Fall Time (ns) | 10|5@Channel 1|20|10@Channel 2 |
| Typical Rise Time (ns) | 75|5@Channel 1|130|30@Channel 2 |
| Number of Elements per Chip | 2 |
| Maximum Power Dissipation (mW) | 4500@Channel 1|5000@Channel 2 |
| Typical Gate Charge @ 10V (nC) | 25@Channel 1|81@Channel 2 |
| Typical Gate Charge @ Vgs (nC) | 11.7@4.5V@Channel 1|81@10V|38@4.5V@Channel 2|25@10V |
| Maximum Gate Source Voltage (V) | 20 |
| Typical Turn-On Delay Time (ns) | 22|12@Channel 1|40|20@Channel 2 |
| Maximum Drain Source Voltage (V) | 30 |
| Typical Turn-Off Delay Time (ns) | 21|22@Channel 1|41|40@Channel 2 |
| Maximum Gate Threshold Voltage (V) | 2.2 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 36@Channel 1|63@Channel 2 |
| Typical Input Capacitance @ Vds (pF) | 5550@15V@Channel 2|1630@15V@Channel 1 |
| Maximum Drain Source Resistance (mOhm) | 2.1@10V@Channel|0.68@10V@Channel 2 |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Description |
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