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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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SIZF906BDT-T1-GE3
SIZF906BDT-T1-GE3
MOSFETs SIZF906BDT-T1-GE3
Vishay
SIZF906BDT-T1-GE3
--
Diodes, Transistors and Thyristors
MOSFETs
SIZF906BDT-T1-GE3.pdf
Specification
Product AttributeAttribute Value
EU RoHSCompliant
ECCN (US)EAR99
PackagingTape and Reel
Channel ModeEnhancement
Channel TypeN
ConfigurationDual
Product CategoryPower MOSFET
Maximum IDSS (uA)1@Channel 1|1000@Channel 2
Process TechnologyTrenchFET
Typical Fall Time (ns)10|5@Channel 1|20|10@Channel 2
Typical Rise Time (ns)75|5@Channel 1|130|30@Channel 2
Number of Elements per Chip2
Maximum Power Dissipation (mW)4500@Channel 1|5000@Channel 2
Typical Gate Charge @ 10V (nC)25@Channel 1|81@Channel 2
Typical Gate Charge @ Vgs (nC)11.7@4.5V@Channel 1|81@10V|38@4.5V@Channel 2|25@10V
Maximum Gate Source Voltage (V)20
Typical Turn-On Delay Time (ns)22|12@Channel 1|40|20@Channel 2
Maximum Drain Source Voltage (V)30
Typical Turn-Off Delay Time (ns)21|22@Channel 1|41|40@Channel 2
Maximum Gate Threshold Voltage (V)2.2
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)36@Channel 1|63@Channel 2
Typical Input Capacitance @ Vds (pF)5550@15V@Channel 2|1630@15V@Channel 1
Maximum Drain Source Resistance (mOhm)2.1@10V@Channel|0.68@10V@Channel 2
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET N-CH 30V 36A/63A T/R
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