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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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SIZF920DT-T1-GE3
SIZF920DT-T1-GE3
MOSFETs SIZF920DT-T1-GE3
Vishay
SIZF920DT-T1-GE3
--
Diodes, Transistors and Thyristors
MOSFETs
SIZF920DT-T1-GE3.pdf
Specification
Product AttributeAttribute Value
PPAPNo
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count8
AutomotiveNo
PCB changed8
Channel ModeEnhancement
Channel TypeN
ConfigurationDual
Package Width5
Package Length6
Product CategoryPower MOSFET
Supplier PackagePowerPAIR EP
Maximum IDSS (uA)1@Channel 1|400@Channel 2
Typical Fall Time (ns)10@Channel 2|10|5@Channel 1|27
Typical Rise Time (ns)95|5@Channel 1|116|70@Channel 2
Number of Elements per Chip2
Maximum Power Dissipation (mW)3900@Channel 1|4500@Channel 2
Typical Gate Charge @ 10V (nC)19@Channel 1|83@Channel 2
Typical Gate Charge @ Vgs (nC)38.6@4.5V@Channel 2|19@10V|9@4.5V@Channel 1|83@10V
Maximum Gate Source Voltage (V)20@Channel 1|16@Channel 2
Typical Turn-On Delay Time (ns)18|11@Channel 1|34|17@Channel 2
Maximum Drain Source Voltage (V)30
Typical Turn-Off Delay Time (ns)17|20@Channel 1|45|43@Channel 2
Maximum Gate Threshold Voltage (V)2.4@Channel 1|2.2@Channel 2
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)28@Channel 1|49@Channel 2
Typical Input Capacitance @ Vds (pF)1300@15V@Channel 1|5230@15V@Channel 2
Maximum Drain Source Resistance (mOhm)3.07@10V@Channel 1|1.05@10V@Channel 2
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET N-CH 30V 28A/49A 8-Pin PowerPAIR EP T/R
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