Product Attribute | Attribute Value |
PPAP | No |
EU RoHS | Compliant |
ECCN (US) | EAR99 |
Packaging | Tape and Reel |
Automotive | No |
Part Status | Active |
Channel Mode | Enhancement |
Channel Type | N |
Configuration | Dual |
Product Category | Power MOSFET |
Process Technology | TrenchFET Gen IV |
Typical Fall Time (ns) | 6@Channel 1|17@Channel 2 |
Typical Rise Time (ns) | 92@Channel 1|95@Channel 2 |
Number of Elements per Chip | 2 |
Maximum Power Dissipation (mW) | 3900@Channel 1|4500@Channel 2 |
Typical Gate Charge @ 10V (nC) | 18.5@Channel 1|77@Channel 2 |
Typical Gate Charge @ Vgs (nC) | 18.5@10V|8.5@4.5V@ Channel 1|77@10V|35@4.5V@Channel 2 |
Maximum Gate Source Voltage (V) | 16 |
Typical Turn-On Delay Time (ns) | 20@Channel 1|38@Channel 2 |
Maximum Drain Source Voltage (V) | 30 |
Typical Turn-Off Delay Time (ns) | 22@Channel 1|46@Channel 2 |
Maximum Operating Temperature (°C) | 150 |
Minimum Operating Temperature (°C) | -55 |
Maximum Continuous Drain Current (A) | 33@Channel 1|61@Channel 2 |
Typical Input Capacitance @ Vds (pF) | 1265@15V@Channel 1|5650@15V@Channel 2 |
Maximum Drain Source Resistance (mOhm) | 2.45@10V@ Channel 1|0.75@10V@Channel 2 |
Description |