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SIZF928DT-T1-GE3
SIZF928DT-T1-GE3
MOSFETs SIZF928DT-T1-GE3
Vishay
SIZF928DT-T1-GE3
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Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
ECCN (US)EAR99
PackagingTape and Reel
AutomotiveNo
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationDual
Product CategoryPower MOSFET
Process TechnologyTrenchFET Gen IV
Typical Fall Time (ns)6@Channel 1|17@Channel 2
Typical Rise Time (ns)92@Channel 1|95@Channel 2
Number of Elements per Chip2
Maximum Power Dissipation (mW)3900@Channel 1|4500@Channel 2
Typical Gate Charge @ 10V (nC)18.5@Channel 1|77@Channel 2
Typical Gate Charge @ Vgs (nC)18.5@10V|8.5@4.5V@ Channel 1|77@10V|35@4.5V@Channel 2
Maximum Gate Source Voltage (V)16
Typical Turn-On Delay Time (ns)20@Channel 1|38@Channel 2
Maximum Drain Source Voltage (V)30
Typical Turn-Off Delay Time (ns)22@Channel 1|46@Channel 2
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)33@Channel 1|61@Channel 2
Typical Input Capacitance @ Vds (pF)1265@15V@Channel 1|5650@15V@Channel 2
Maximum Drain Source Resistance (mOhm)2.45@10V@ Channel 1|0.75@10V@Channel 2
Description
Trans MOSFET N-CH 30V 33A/61A T/R
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