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SP001075902
SP001075902
MOSFETs SP001075902
Infineon
SP001075902
--
Diodes, Transistors and Thyristors
MOSFETs
SP001075902.pdf
Specification
Product AttributeAttribute Value
SVHCYes
EU RoHSCompliant with Exemption
ECCN (US)EAR99
PackagingTape and Reel
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationDual
Product CategoryPower MOSFET
Maximum IDSS (uA)1
Process TechnologyOptiMOS 5
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)1.4@Q 1|2.6@Q 2
Typical Rise Time (ns)4.7@Q 1|4.3@Q 2
Number of Elements per Chip2
Maximum Gate Resistance (Ohm)1.2
Maximum Power Dissipation (mW)6250
Typical Gate Charge @ Vgs (nC)5.6@4.5V@Q 1|20@4.5V@Q 2
Maximum Gate Source Voltage (V)±16
Typical Output Capacitance (pF)390@Q 1|1400@Q 2
Typical Turn-On Delay Time (ns)4.3@Q 1|5.6@Q 2
Maximum Drain Source Voltage (V)25
Typical Gate Plateau Voltage (V)2.6@Q 1|2.3@Q 2
Typical Turn-Off Delay Time (ns)4.3@Q 1|8.8@Q 2
Maximum Diode Forward Voltage (V)1
Typical Diode Forward Voltage (V)0.84@Q 1|0.77@Q 2
Typical Gate to Drain Charge (nC)1.4@Q 1|4.7@Q 2
Maximum Gate Threshold Voltage (V)2
Minimum Gate Threshold Voltage (V)1.2
Typical Gate Threshold Voltage (V)1.6
Typical Gate to Source Charge (nC)2@Q 1|6.4@Q 2
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)31@Q 1|50@Q 2
Operating Junction Temperature (°C)-55 to 150
Typical Input Capacitance @ Vds (pF)780@12V@Q 1|2700@12V@Q 2
Typical Reverse Recovery Charge (nC)10@Q 1|20@Q 2
Maximum Drain Source Resistance (mOhm)3@10V@Q 1|0.8@10V@Q 2
Maximum Gate Source Leakage Current (nA)100
Maximum Positive Gate Source Voltage (V)16
Maximum Pulsed Drain Current @ TC=25°C (A)160
Maximum Power Dissipation on PCB @ TC=25°C (W)6.25
Typical Reverse Transfer Capacitance @ Vds (pF)38@12V@Q 1|130@12V@Q 2
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)50
Description
Trans MOSFET N-CH 25V 31A/50A 8-Pin TISON EP T/R
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