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SPB03N60C3
SPB03N60C3
MOSFETs SPB03N60C3
Infineon
SPB03N60C3
--
Diodes, Transistors and Thyristors
MOSFETs
SPB03N60C3.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
Lead ShapeGull-wing
PCB changed2
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width9.25
Package Height4.4
Package Length10
Product CategoryPower MOSFET
Supplier PackageD2PAK
Maximum IDSS (uA)1
Process TechnologyCoolMOS
Standard Package NameTO-263
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)12
Typical Rise Time (ns)3
Number of Elements per Chip1
Maximum Power Dissipation (mW)38000
Typical Gate Charge @ 10V (nC)13
Typical Gate Charge @ Vgs (nC)13@10V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)7
Maximum Drain Source Voltage (V)600
Typical Turn-Off Delay Time (ns)64
Maximum Gate Threshold Voltage (V)3.9
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)3.2
Typical Input Capacitance @ Vds (pF)400@25V
Maximum Drain Source Resistance (mOhm)1400@10V
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET N-CH 600V 3.2A 3-Pin(2+Tab) D2PAK T/R
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