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SPB11N60C3T
SPB11N60C3T
MOSFETs SPB11N60C3T
Infineon
SPB11N60C3T
--
Diodes, Transistors and Thyristors
MOSFETs
SPB11N60C3T.pdf
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
TabTab
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
Lead ShapeGull-wing
PCB changed2
Part StatusUnconfirmed
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width9.25
Package Height4.4
Package Length10
Product CategoryPower MOSFET
Supplier PackageD2PAK
Process TechnologyCoolMOS
Standard Package NameTO-263
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)5
Typical Rise Time (ns)5
Number of Elements per Chip1
Maximum Power Dissipation (mW)125000
Typical Gate Charge @ 10V (nC)45
Typical Gate Charge @ Vgs (nC)45@10V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)10
Maximum Drain Source Voltage (V)600
Typical Turn-Off Delay Time (ns)44
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)11
Typical Input Capacitance @ Vds (pF)1200@25V
Maximum Drain Source Resistance (mOhm)380@10V
Description
Trans MOSFET N-CH 600V 11A 3-Pin(2+Tab) D2PAK T/R
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