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MOSFETs SPB80N04S2H4T
Infineon
SPB80N04S2H4T
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| SVHC | Yes |
| EU RoHS | Not Compliant |
| ECCN (US) | EAR99 |
| Part Status | Obsolete |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single |
| Product Category | Power MOSFET |
| Process Technology | SIPMOS |
| SVHC Exceeds Threshold | Yes |
| Typical Fall Time (ns) | 35 |
| Typical Rise Time (ns) | 36 |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 300000 |
| Typical Gate Charge @ 10V (nC) | 111 |
| Typical Gate Charge @ Vgs (nC) | 111@10V |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Turn-On Delay Time (ns) | 14 |
| Maximum Drain Source Voltage (V) | 40 |
| Typical Turn-Off Delay Time (ns) | 46 |
| Maximum Operating Temperature (°C) | 175 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 80 |
| Typical Input Capacitance @ Vds (pF) | 4430@25V |
| Maximum Drain Source Resistance (MOhm) | 4@10V |
| Description |
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