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MOSFETs SPD04P10PGBTMA1
Infineon
SPD04P10PGBTMA1
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| HTS | 8541.29.00.95 |
| Tab | Tab |
| PPAP | Unknown |
| SVHC | Yes |
| EU RoHS | Compliant with Exemption |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 3 |
| Automotive | Yes |
| Lead Shape | Gull-wing |
| PCB changed | 2 |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | P |
| Configuration | Single |
| Package Width | 6.22(Max) |
| Package Height | 2.41(Max) |
| Package Length | 6.73(Max) |
| Product Category | Power MOSFET |
| Supplier Package | DPAK |
| Process Technology | SIPMOS |
| Standard Package Name | TO-252 |
| SVHC Exceeds Threshold | Yes |
| Typical Fall Time (ns) | 4.5 |
| Typical Rise Time (ns) | 8.6 |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 38000 |
| Typical Gate Charge @ 10V (nC) | 9 |
| Typical Gate Charge @ Vgs (nC) | 9@10V |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Output Capacitance (pF) | 62 |
| Typical Turn-On Delay Time (ns) | 5.7 |
| Maximum Drain Source Voltage (V) | 100 |
| Typical Turn-Off Delay Time (ns) | 14 |
| Typical Gate to Drain Charge (nC) | 5 |
| Maximum Gate Threshold Voltage (V) | 4 |
| Typical Gate to Source Charge (nC) | 1.4 |
| Maximum Operating Temperature (°C) | 175 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 4 |
| Typical Input Capacitance @ Vds (pF) | 240@25V |
| Typical Reverse Recovery Charge (nC) | 218 |
| Maximum Drain Source Resistance (MOhm) | 1000@10V |
| Description |
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