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SPD35N10T
SPD35N10T
MOSFETs SPD35N10T
Infineon
SPD35N10T
--
Diodes, Transistors and Thyristors
MOSFETs
SPD35N10T.pdf
Specification
Product AttributeAttribute Value
EU RoHSCompliant
ECCN (US)EAR99
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Product CategoryPower MOSFET
Process TechnologySIPMOS
Typical Fall Time (ns)23
Typical Rise Time (ns)63
Number of Elements per Chip1
Maximum Power Dissipation (mW)150000
Typical Gate Charge @ 10V (nC)49
Typical Gate Charge @ Vgs (nC)49@10V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)12.2
Maximum Drain Source Voltage (V)100
Typical Turn-Off Delay Time (ns)39
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)35
Typical Input Capacitance @ Vds (pF)1180@25V
Maximum Drain Source Resistance (mOhm)44@10V
Description
Trans MOSFET N-CH 100V 35A 3-Pin(2+Tab) DPAK
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