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SPI08N50C3
SPI08N50C3
MOSFETs SPI08N50C3
Infineon
SPI08N50C3
--
Diodes, Transistors and Thyristors
MOSFETs
SPI08N50C3.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPUnknown
EU RoHSCompliant
MountingThrough Hole
ECCN (US)EAR99
PackagingTube
Pin Count3
AutomotiveUnknown
Lead ShapeThrough Hole
PCB changed3
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width4.4
Package Height9.25
Package Length10
Product CategoryPower MOSFET
Supplier PackageTO-262
Process TechnologyCoolMOS
Standard Package NameI2PAK
Typical Fall Time (ns)7
Typical Rise Time (ns)5
Number of Elements per Chip1
Maximum Power Dissipation (mW)83000
Typical Gate Charge @ 10V (nC)32
Typical Gate Charge @ Vgs (nC)32@10V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)6
Maximum Drain Source Voltage (V)560
Typical Turn-Off Delay Time (ns)60
Maximum Gate Threshold Voltage (V)3.9
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)7.6
Typical Input Capacitance @ Vds (pF)750@25V
Maximum Drain Source Resistance (mOhm)600@10V
Description
Trans MOSFET N-CH 560V 7.6A Automotive 3-Pin(3+Tab) TO-262 Tube
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