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SPN01N60C3T
SPN01N60C3T
MOSFETs SPN01N60C3T
Infineon
SPN01N60C3T
--
Diodes, Transistors and Thyristors
MOSFETs
SPN01N60C3T.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count4
AutomotiveNo
Lead ShapeGull-wing
PCB changed3
Part StatusUnconfirmed
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Dual Drain
Package Width3.5
Package Height1.6
Package Length6.5
Product CategoryPower MOSFET
Supplier PackageSOT-223
Process TechnologyCoolMOS
Standard Package NameSOT
Typical Fall Time (ns)30
Typical Rise Time (ns)30
Number of Elements per Chip1
Maximum Power Dissipation (mW)1800
Typical Gate Charge @ 10V (nC)3.9
Typical Gate Charge @ Vgs (nC)3.9@10V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)45
Maximum Drain Source Voltage (V)650
Typical Turn-Off Delay Time (ns)60
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)0.3
Typical Input Capacitance @ Vds (pF)100@25V
Maximum Drain Source Resistance (MOhm)6000@10V
Description
Trans MOSFET N-CH 650V 0.3A 4-Pin(3+Tab) SOT-223 T/R
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