Product Attribute | Attribute Value |
Tab | Tab |
PPAP | No |
EU RoHS | Compliant |
Mounting | Through Hole |
ECCN (US) | EAR99 |
Packaging | Tube |
Pin Count | 3 |
Automotive | No |
PCB changed | 3 |
Part Status | Obsolete |
Channel Mode | Enhancement |
Channel Type | P |
Configuration | Single |
Package Width | 4.57(Max) |
Package Height | 9.45(Max) |
Package Length | 10.36(Max) |
Product Category | Power MOSFET |
Supplier Package | TO-220 |
Process Technology | SIPMOS |
Standard Package Name | TO-220 |
Typical Fall Time (ns) | 11 |
Typical Rise Time (ns) | 5.8 |
Number of Elements per Chip | 1 |
Maximum Power Dissipation (mW) | 81100 |
Typical Gate Charge @ 10V (nC) | 21 |
Typical Gate Charge @ Vgs (nC) | 21@10V |
Maximum Gate Source Voltage (V) | ±20 |
Typical Output Capacitance (pF) | 230 |
Typical Turn-On Delay Time (ns) | 12 |
Maximum Drain Source Voltage (V) | 60 |
Typical Turn-Off Delay Time (ns) | 25 |
Typical Gate to Drain Charge (nC) | 11 |
Maximum Gate Threshold Voltage (V) | 4 |
Typical Gate to Source Charge (nC) | 4.1 |
Maximum Operating Temperature (°C) | 175 |
Minimum Operating Temperature (°C) | -55 |
Maximum Continuous Drain Current (A) | 18.7 |
Typical Input Capacitance @ Vds (pF) | 690@25V |
Typical Reverse Recovery Charge (nC) | 139 |
Maximum Drain Source Resistance (MOhm) | 130@10V |
Description |