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SPS01N60C3
SPS01N60C3
MOSFETs SPS01N60C3
Infineon
SPS01N60C3
--
Diodes, Transistors and Thyristors
MOSFETs
SPS01N60C3.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
EU RoHSCompliant with Exemption
MountingThrough Hole
ECCN (US)EAR99
PackagingTube
Pin Count3
AutomotiveNo
PCB changed3
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width2.3
Package Height6.22
Package Length6.5
Product CategoryPower MOSFET
Supplier PackageTO-251
Process TechnologyCoolMOS
Standard Package NameTO-251
Typical Fall Time (ns)30
Typical Rise Time (ns)25
Number of Elements per Chip1
Maximum Power Dissipation (mW)11000
Typical Gate Charge @ 10V (nC)3.9
Typical Gate Charge @ Vgs (nC)3.9@10V
Maximum Gate Source Voltage (V)±30
Typical Turn-On Delay Time (ns)30
Maximum Drain Source Voltage (V)650
Typical Turn-Off Delay Time (ns)55
Maximum Gate Threshold Voltage (V)3.9
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)0.8
Typical Input Capacitance @ Vds (pF)100@25V
Maximum Drain Source Resistance (mOhm)6000@10V
Description
Trans MOSFET N-CH 650V 0.8A 3-Pin(3+Tab) TO-251 Tube
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