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SQ1912EEH-T1-GE3
SQ1912EEH-T1-GE3
MOSFETs SQ1912EEH-T1-GE3
Vishay
SQ1912EEH-T1-GE3
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
PPAPUnknown
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count6
AutomotiveYes
Lead ShapeGull-wing
PCB changed6
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationDual
Package Width1.25
Package Height1(Max)
Package Length2
Product CategoryPower MOSFET
Supplier PackageSC-70
Standard Package NameSOT
Typical Fall Time (ns)142
Typical Rise Time (ns)51
Number of Elements per Chip2
Maximum Power Dissipation (mW)1500
Typical Gate Charge @ Vgs (nC)1.5@4.5V
Maximum Gate Source Voltage (V)±12
Typical Turn-On Delay Time (ns)34
Maximum Drain Source Voltage (V)20
Typical Turn-Off Delay Time (ns)431
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)0.8
Typical Input Capacitance @ Vds (pF)68@10V
Maximum Drain Source Resistance (MOhm)280@4.5V
Description
Trans MOSFET N-CH 20V 0.8A Automotive 6-Pin SC-70 T/R
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