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SQ2315ES-T1_GE3
SQ2315ES-T1_GE3
MOSFETs SQ2315ES-T1_GE3
Vishay
SQ2315ES-T1_GE3
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
PPAPUnknown
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveYes
Lead ShapeGull-wing
PCB changed3
Part StatusActive
Channel ModeEnhancement
Channel TypeP
ConfigurationSingle
Package Width1.4(Max)
Package Height1.02(Max)
Package Length3.04(Max)
Product CategoryPower MOSFET
Supplier PackageSOT-23
Maximum IDSS (uA)1
Process TechnologyTrenchFET
Standard Package NameSOT
Typical Fall Time (ns)13
Typical Rise Time (ns)19
Supplier Temperature GradeAutomotive
Number of Elements per Chip1
Maximum Power Dissipation (mW)2000
Typical Gate Charge @ Vgs (nC)9@4.5V
Maximum Gate Source Voltage (V)±8
Typical Turn-On Delay Time (ns)17
Maximum Drain Source Voltage (V)12
Typical Turn-Off Delay Time (ns)28
Maximum Gate Threshold Voltage (V)1
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)5
Typical Input Capacitance @ Vds (pF)695@6V
Maximum Drain Source Resistance (MOhm)50@4.5V
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET P-CH 12V 5A Automotive 3-Pin SOT-23 T/R
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