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SQ2318AES-T1_GE3
SQ2318AES-T1_GE3
MOSFETs SQ2318AES-T1_GE3
Vishay
SQ2318AES-T1_GE3
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
PPAPUnknown
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveYes
Lead ShapeGull-wing
PCB changed3
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width1.4(Max)
Package Height1.02(Max)
Package Length3.04(Max)
Product CategoryPower MOSFET
Supplier PackageSOT-23
Maximum IDSS (uA)1
Process TechnologyTrenchFET
Standard Package NameSOT
Typical Fall Time (ns)5.7
Typical Rise Time (ns)8.4
Supplier Temperature GradeAutomotive
Number of Elements per Chip1
Maximum Power Dissipation (mW)3000
Typical Gate Charge @ 10V (nC)8.7
Typical Gate Charge @ Vgs (nC)8.7@10V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)7.5
Maximum Drain Source Voltage (V)40
Typical Turn-Off Delay Time (ns)12
Maximum Gate Threshold Voltage (V)2.5
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)8
Typical Input Capacitance @ Vds (pF)442@20V
Maximum Drain Source Resistance (mOhm)31@10V
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET N-CH 40V 8A Automotive 3-Pin SOT-23 T/R
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