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SQ4282EY-T1_GE3
SQ4282EY-T1_GE3
MOSFETs SQ4282EY-T1_GE3
Vishay
SQ4282EY-T1_GE3
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
PPAPUnknown
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
Pin Count8
AutomotiveYes
Lead ShapeGull-wing
PCB changed8
Part StatusUnconfirmed
Channel ModeEnhancement
Channel TypeN
ConfigurationDual Dual Drain
Package Width4(Max)
Package Height1.55(Max)
Package Length5(Max)
Product CategoryPower MOSFET
Supplier PackageSOIC N
Maximum IDSS (uA)1
Process TechnologyTrenchFET
Standard Package NameSOP
Typical Fall Time (ns)8
Typical Rise Time (ns)11
Supplier Temperature GradeAutomotive
Number of Elements per Chip2
Maximum Power Dissipation (mW)3900
Typical Gate Charge @ 10V (nC)31.5
Typical Gate Charge @ Vgs (nC)31.5@10V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)10
Maximum Drain Source Voltage (V)30
Typical Turn-Off Delay Time (ns)34
Maximum Gate Threshold Voltage (V)2.5
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)8
Typical Input Capacitance @ Vds (pF)1893@15V
Maximum Drain Source Resistance (mOhm)12.3@10V
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET N-CH 30V 8A Automotive 8-Pin SOIC N T/R
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