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MOSFETs SQ4532EY-T1-GE3
Vishay
SQ4532EY-T1-GE3
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Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| PPAP | Unknown |
| EU RoHS | Compliant |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 8 |
| Automotive | Yes |
| Lead Shape | Gull-wing |
| PCB changed | 8 |
| Part Status | Obsolete |
| Channel Mode | Enhancement |
| Channel Type | N|P |
| Configuration | Dual Dual Drain |
| Package Width | 4(Max) |
| Package Height | 1.55(Max) |
| Package Length | 5(Max) |
| Product Category | Power MOSFET |
| Supplier Package | SO |
| Maximum IDSS (uA) | 1 |
| Process Technology | TrenchFET |
| Standard Package Name | SOP |
| Typical Fall Time (ns) | 7@N Channel|8@P Channel |
| Typical Rise Time (ns) | 10@N Channel|9@P Channel |
| Supplier Temperature Grade | Automotive |
| Number of Elements per Chip | 2 |
| Maximum Power Dissipation (mW) | 3300 |
| Typical Gate Charge @ 10V (nC) | 8.7@N Channel|9.7@P Channel |
| Typical Gate Charge @ Vgs (nC) | 8.7@10V@N Channel|9.7@10V@P Channel |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Turn-On Delay Time (ns) | 7 |
| Maximum Drain Source Voltage (V) | 30 |
| Typical Turn-Off Delay Time (ns) | 14@N Channel|17@P Channel |
| Maximum Gate Threshold Voltage (V) | 2.5 |
| Maximum Operating Temperature (°C) | 175 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 5.6@N Channel|5.3@P Channel |
| Typical Input Capacitance @ Vds (pF) | 444@25V@N Channel|384@25V@P Channel |
| Maximum Drain Source Resistance (mOhm) | 55@10V@N Channel|70@10V@P Channel |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Description |
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