Product Attribute | Attribute Value |
HTS | 8541.29.00.95 |
PPAP | Unknown |
EU RoHS | Compliant |
Mounting | Surface Mount |
ECCN (US) | EAR99 |
Packaging | Tape and Reel |
Pin Count | 8 |
Automotive | Yes |
PCB changed | 8 |
Part Status | Obsolete |
Channel Mode | Enhancement |
Channel Type | P |
Configuration | Single Quad Drain Triple Source |
Package Width | 3.05 |
Package Height | 1.07(Max) |
Package Length | 3.05 |
Product Category | Power MOSFET |
Supplier Package | PowerPAK 1212-W EP |
Process Technology | TrenchFET |
Typical Fall Time (ns) | 8 |
Typical Rise Time (ns) | 9 |
Supplier Temperature Grade | Automotive |
Number of Elements per Chip | 1 |
Maximum Power Dissipation (mW) | 53000 |
Typical Gate Charge @ 10V (nC) | 25.5 |
Typical Gate Charge @ Vgs (nC) | 25.5@10V |
Maximum Gate Source Voltage (V) | ±20 |
Typical Output Capacitance (pF) | 132 |
Typical Turn-On Delay Time (ns) | 9 |
Maximum Drain Source Voltage (V) | 60 |
Typical Turn-Off Delay Time (ns) | 37 |
Maximum Diode Forward Voltage (V) | 1.2 |
Maximum Gate Threshold Voltage (V) | 2.5 |
Minimum Gate Threshold Voltage (V) | 1.5 |
Maximum Operating Temperature (°C) | 175 |
Minimum Operating Temperature (°C) | -55 |
Maximum Continuous Drain Current (A) | 16 |
Operating Junction Temperature (°C) | -55 to 175 |
Typical Input Capacitance @ Vds (pF) | 1108@25V |
Maximum Drain Source Resistance (MOhm) | 65@10V |
Maximum Positive Gate Source Voltage (V) | 20 |
Maximum Pulsed Drain Current @ TC=25°C (A) | 64 |
Maximum Junction Ambient Thermal Resistance on PCB (°C/W) | 81 |
Description |