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SQ7415AENW-T1_GE3
SQ7415AENW-T1_GE3
MOSFETs SQ7415AENW-T1_GE3
Vishay
SQ7415AENW-T1_GE3
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
PPAPUnknown
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count8
AutomotiveYes
PCB changed8
Part StatusObsolete
Channel ModeEnhancement
Channel TypeP
ConfigurationSingle Quad Drain Triple Source
Package Width3.05
Package Height1.07(Max)
Package Length3.05
Product CategoryPower MOSFET
Supplier PackagePowerPAK 1212-W EP
Process TechnologyTrenchFET
Typical Fall Time (ns)8
Typical Rise Time (ns)9
Supplier Temperature GradeAutomotive
Number of Elements per Chip1
Maximum Power Dissipation (mW)53000
Typical Gate Charge @ 10V (nC)25.5
Typical Gate Charge @ Vgs (nC)25.5@10V
Maximum Gate Source Voltage (V)±20
Typical Output Capacitance (pF)132
Typical Turn-On Delay Time (ns)9
Maximum Drain Source Voltage (V)60
Typical Turn-Off Delay Time (ns)37
Maximum Diode Forward Voltage (V)1.2
Maximum Gate Threshold Voltage (V)2.5
Minimum Gate Threshold Voltage (V)1.5
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)16
Operating Junction Temperature (°C)-55 to 175
Typical Input Capacitance @ Vds (pF)1108@25V
Maximum Drain Source Resistance (MOhm)65@10V
Maximum Positive Gate Source Voltage (V)20
Maximum Pulsed Drain Current @ TC=25°C (A)64
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)81
Description
Trans MOSFET P-CH 60V 16A Automotive 8-Pin PowerPAK 1212-W EP T/R
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