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SQA413CEJW-T1_GE3
SQA413CEJW-T1_GE3
MOSFETs SQA413CEJW-T1_GE3
Vishay
SQA413CEJW-T1_GE3
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Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
EU RoHSCompliant
ECCN (US)EAR99
PackagingTape and Reel
Channel ModeEnhancement
Channel TypeP
ConfigurationSingle Quad Drain
Product CategoryPower MOSFET
Process TechnologyTrenchFET
Typical Fall Time (ns)7
Typical Rise Time (ns)19
Supplier Temperature GradeAutomotive
Number of Elements per Chip1
Maximum Power Dissipation (mW)13600
Typical Gate Charge @ Vgs (nC)10.1@4.5V
Maximum Gate Source Voltage (V)±12
Typical Turn-On Delay Time (ns)13
Maximum Drain Source Voltage (V)20
Typical Turn-Off Delay Time (ns)24
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)7.5
Operating Junction Temperature (°C)-55 to 175
Typical Input Capacitance @ Vds (pF)938@10V
Maximum Drain Source Resistance (mOhm)38@4.5V
Description
Trans MOSFET P-CH 20V 7.5A T/R
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