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SQA444CEJW-T1_GE3
SQA444CEJW-T1_GE3
MOSFETs SQA444CEJW-T1_GE3
Vishay
SQA444CEJW-T1_GE3
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Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
PPAPUnknown
EU RoHSCompliant
ECCN (US)EAR99
PackagingTape and Reel
AutomotiveYes
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Quad Drain
Product CategoryPower MOSFET
Process TechnologyTrenchFET
Typical Fall Time (ns)3
Typical Rise Time (ns)3
Supplier Temperature GradeAutomotive
Number of Elements per Chip1
Maximum Power Dissipation (mW)13600
Typical Gate Charge @ 10V (nC)6
Typical Gate Charge @ Vgs (nC)6@10V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)8
Maximum Drain Source Voltage (V)60
Typical Turn-Off Delay Time (ns)13
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)9
Operating Junction Temperature (°C)-55 to 175
Typical Input Capacitance @ Vds (pF)378@25V
Maximum Drain Source Resistance (mOhm)39@10V
Description
Trans MOSFET N-CH 60V 9A T/R
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