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MOSFETs SQJ208EP-T1_GE3
Vishay
SQJ208EP-T1_GE3
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Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| Tab | Tab |
| PPAP | Unknown |
| EU RoHS | Compliant |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 5 |
| Automotive | Yes |
| PCB changed | 4 |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Dual |
| Package Width | 4.37 |
| Package Height | 1.07 |
| Package Length | 4.9 |
| Product Category | Power MOSFET |
| Supplier Package | PowerPAK SO |
| Typical Fall Time (ns) | 57@N Channel 2|25@N Channel 1 |
| Typical Rise Time (ns) | 5@N Channel 2|4@N Channel 1 |
| Number of Elements per Chip | 2 |
| Maximum Power Dissipation (mW) | 48000@N Channel 2|27000@N Channel 1 |
| Typical Gate Charge @ 10V (nC) | 48.2@N Channel 2|22@N Channel 1 |
| Typical Gate Charge @ Vgs (nC) | 48.2@10V@N Channel 2|22@10V@N Channel 1 |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Turn-On Delay Time (ns) | 14@N Channel 2|10@N Channel 1 |
| Maximum Drain Source Voltage (V) | 40 |
| Typical Turn-Off Delay Time (ns) | 35@N Channel 2|24@N Channel 1 |
| Maximum Operating Temperature (°C) | 175 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 60@N Channel 2|20@N Channel 1 |
| Typical Input Capacitance @ Vds (pF) | 2839@25V@N Channel 2|1197@25V@N Channel 1 |
| Maximum Drain Source Resistance (mOhm) | 3.9@10V@N Channel 2|9.4@10V@N Channel 1 |
| Description |
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