Product Attribute | Attribute Value |
HTS | 8541.29.00.95 |
Tab | Tab |
PPAP | Unknown |
EU RoHS | Compliant |
Mounting | Surface Mount |
ECCN (US) | EAR99 |
Packaging | Tape and Reel |
Pin Count | 5 |
Automotive | Yes |
Lead Shape | Gull-wing |
PCB changed | 4 |
Channel Mode | Enhancement |
Channel Type | N |
Configuration | Dual Dual Drain |
Package Width | 4.37 |
Package Height | 1.07 |
Package Length | 4.9 |
Product Category | Power MOSFET |
Supplier Package | PowerPAK SO |
Maximum IDSS (uA) | 1 |
Process Technology | TrenchFET |
Typical Fall Time (ns) | 11@Channel 2|8@Channel 1 |
Typical Rise Time (ns) | 3@Channel 2|2@Channel 1 |
Supplier Temperature Grade | Automotive |
Number of Elements per Chip | 2 |
Maximum Power Dissipation (mW) | 48000@Channel 2|27000@Channel 1 |
Typical Gate Charge @ 10V (nC) | 19.2@Channel 2|9.2@Channel 1 |
Typical Gate Charge @ Vgs (nC) | 19.2@10V@Channel 2|9.2@10V@Channel 1 |
Maximum Gate Source Voltage (V) | ±20 |
Typical Turn-On Delay Time (ns) | 12@Channel 2|11@Channel 1 |
Maximum Drain Source Voltage (V) | 60 |
Typical Turn-Off Delay Time (ns) | 20@Channel 2|16@Channel 1 |
Maximum Gate Threshold Voltage (V) | 3.5 |
Maximum Operating Temperature (°C) | 175 |
Minimum Operating Temperature (°C) | -55 |
Maximum Continuous Drain Current (A) | 54@Channel 2|20@Channel 1 |
Typical Input Capacitance @ Vds (pF) | 1490@25V@Channel 2|687@25V@Channel 1 |
Maximum Drain Source Resistance (mOhm) | 8.6@10V@Channel 2|20@10V@Channel 1 |
Maximum Gate Source Leakage Current (nA) | 100 |
Description |