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SQJ465EP-T1-GE3
SQJ465EP-T1-GE3
MOSFETs SQJ465EP-T1-GE3
Vishay
SQJ465EP-T1-GE3
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Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
TabTab
PPAPUnknown
EU RoHSCompliant
MountingSurface Mount
PackagingTape and Reel
Pin Count5
AutomotiveYes
Lead ShapeGull-wing
PCB changed4
Part StatusObsolete
Channel ModeEnhancement
Channel TypeP
ConfigurationSingle Triple Source
Package Width4.37
Package Height1.07
Package Length4.9
Product CategoryPower MOSFET
Supplier PackagePowerPAK SO
Maximum IDSS (uA)1
Process TechnologyTrenchFET
Typical Fall Time (ns)8
Typical Rise Time (ns)13
Supplier Temperature GradeAutomotive
Number of Elements per Chip1
Maximum Power Dissipation (mW)45000
Typical Gate Charge @ 10V (nC)26.5
Typical Gate Charge @ Vgs (nC)26.5@10V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)11
Maximum Drain Source Voltage (V)60
Typical Turn-Off Delay Time (ns)36
Maximum Gate Threshold Voltage (V)2.5
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)8
Typical Input Capacitance @ Vds (pF)912@30V
Maximum Drain Source Resistance (MOhm)85@10V
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET P-CH 60V 8A Automotive 5-Pin(4+Tab) PowerPAK SO T/R
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