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MOSFETs SQJ570EP-T1_GE3
Vishay
SQJ570EP-T1_GE3
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Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| HTS | 8541.29.00.95 |
| Tab | Tab |
| PPAP | Unknown |
| EU RoHS | Compliant |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 5 |
| Automotive | Yes |
| PCB changed | 4 |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | P|N |
| Configuration | Dual |
| Package Width | 4.37 |
| Package Height | 1.07 |
| Package Length | 4.9 |
| Product Category | Power MOSFET |
| Supplier Package | PowerPAK SO |
| Maximum IDSS (uA) | 1 |
| Typical Fall Time (ns) | 15@P Channel|17@N Channel |
| Typical Rise Time (ns) | 5@P Channel|4@N Channel |
| Supplier Temperature Grade | Automotive |
| Number of Elements per Chip | 2 |
| Maximum Power Dissipation (mW) | 27000 |
| Typical Gate Charge @ 10V (nC) | 12|9 |
| Typical Gate Charge @ Vgs (nC) | 12@10V@P Channel|9@10V@N Channel |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Turn-On Delay Time (ns) | 12@P Channel|8@N Channel |
| Maximum Drain Source Voltage (V) | 100 |
| Typical Turn-Off Delay Time (ns) | 30@P Channel|20@N Channel |
| Maximum Gate Threshold Voltage (V) | 2.5 |
| Maximum Operating Temperature (°C) | 175 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 9.5@P Channel|15@N Channel |
| Typical Input Capacitance @ Vds (pF) | 480@25V@P Channel|420@25V@N Channel |
| Maximum Drain Source Resistance (MOhm) | 146@10V@P Channel|45@10V@N Channel |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Description |
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