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SQJQ131EL-T1_GE3
SQJQ131EL-T1_GE3
MOSFETs SQJQ131EL-T1_GE3
Vishay
SQJQ131EL-T1_GE3
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Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
PPAPUnknown
EU RoHSCompliant
ECCN (US)EAR99
PackagingTape and Reel
AutomotiveYes
Channel ModeEnhancement
Channel TypeP
ConfigurationSingle Quad Drain Triple Source
Product CategoryPower MOSFET
Typical Fall Time (ns)78
Typical Rise Time (ns)30
Supplier Temperature GradeAutomotive
Number of Elements per Chip1
Maximum Power Dissipation (mW)600000
Typical Gate Charge @ 10V (nC)487
Typical Gate Charge @ Vgs (nC)487@10V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)20
Maximum Drain Source Voltage (V)30
Typical Turn-Off Delay Time (ns)194
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)280
Typical Input Capacitance @ Vds (pF)23588@15V
Maximum Drain Source Resistance (mOhm)1.4@10V
Description
Trans MOSFET P-CH 30V 280A Automotive T/R
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